Wet chemical etching is an integral part of semiconductor manufacturing process. KMG’s line of buffered oxide etchants offers a variety of silicon dioxide etching rates and characteristics to meet your processing needs. The family includes standard BOEs, Ultra Etch® surfactanated BOEs, Ultra Etch® LFE (low fluoride etchants) and custom blends. 4 x 1-Gallon Poly Bottles/Case. KMG Item#: 041231.

SMFL Thin Film Wet Etch Rates: These etch rates are intended as a guide. Actual etch rates will vary, please verify before use. Film: 10:1 Buffered Oxide Etch: 10:1 Buffered Oxide Etch with Surfactnat: 5.2:1 Buffered Oxide Etch: 50:1 HF: 16:3:3 Pad Etch. 40% KOH @85°C: Phosphoric Acid @165°C Buffered Oxide Etch (BOE) Etch SiO 2: Ammonium Fluoride (NH 4 F) Aqueous Hydrofluoric Acid (HF) Aqueous: 40%: 15-40°C Ambient: A Series RCe Series: CP8: Etch: Nitric Acid (HNO 3) Hydrofluoric Acid (HF) Ambient: A Series: Etch (Indium) Molybdenum Platinum Nichrome: Etch: Hydrochloric Acid (HCl) Aqueous Nitric Acid (HNO 3) 37-38% 70-71% : QA Buffered Oxide Etch Hazard Alert Code: EXTREME Chemwatch Material Safety Data Sheet Issue Date: 15-Oct-2010 CHEMWATCH 4598-82 X9317SP Version No: Page 1 of 11 Section 1 - CHEMICAL PRODUCT AND COMPANY IDENTIFICATION PRODUCT NAME Buffered Oxide Etch SYNONYMS "Aqueous NH4-HF Etchant Solutions", "etching compound" PROPER SHIPPING NAME The oxEtch-BOE is an acid wet station that is dedicated for etching silicon dioxide.The buffered oxide wet etchant (7:1, NH4F:HF) has excellent selectivity to silicon and silicon nitride.

Buffered Oxide Etch INRF Application note Process name: BOE . Overview . Buffered oxide etch is used to etch thin films of oxide or polysilicate glass (some have used it to etch cavities in glass). It is a buffered HF mixture that slows down and controls the attack rate of HF on oxide. This is a level-1 process and requires basic INRF safety

Below is a table with the freezing point and etch rates for buffered oxide etch mixtures. Table 1269. Buffered Oxide Etch Data Avantor ® is a leading global provider of mission-critical products and services to customers in the life sciences and advanced technologies & applied materials industries. Buffered oxide etch (BOE) is used to remove SiO 2. BOE is a very selective etchant, meaning that it stops at Silicon and does not etch further. This etch may be used in a number of steps. BOE can be used at the beginning of the process to define holes in the thermally grown oxide to fabricate contacts with the Silicon substrate.

The global Buffered Oxide Etch (BOE) market size is expected to gain market growth in the forecast period of 2020 to 2025, with a CAGR of 7.7% in the forecast period of 2020 to 2025 and will expected to reach USD 220.7 million by 2025, from USD 164 million in 2019.

Summary Buffered Oxide Etch (BOE) is a mixture of HF and NH4F in different proportions. 6:1 BOE etching means that 40% NH4F: 49% HF = 6:1 (volume ratio) is mixed. HF is the main etchant and NH4F is used as a buffer. SMFL Thin Film Wet Etch Rates: These etch rates are intended as a guide. Actual etch rates will vary, please verify before use. Film: 10:1 Buffered Oxide Etch: 10:1 Buffered Oxide Etch with Surfactnat: 5.2:1 Buffered Oxide Etch: 50:1 HF: 16:3:3 Pad Etch. 40% KOH @85°C: Phosphoric Acid @165°C Buffered Oxide Etch (BOE) Etch SiO 2: Ammonium Fluoride (NH 4 F) Aqueous Hydrofluoric Acid (HF) Aqueous: 40%: 15-40°C Ambient: A Series RCe Series: CP8: Etch: Nitric Acid (HNO 3) Hydrofluoric Acid (HF) Ambient: A Series: Etch (Indium) Molybdenum Platinum Nichrome: Etch: Hydrochloric Acid (HCl) Aqueous Nitric Acid (HNO 3) 37-38% 70-71% : QA